| PART |
Description |
Maker |
| GN01094B |
GaAs IC (with built-in ferroelectric)
|
Panasonic Semiconductor
|
| GN02035B |
GaAs IC(with built-in ferroelectric)
|
Panasonic Semiconductor
|
| DTA143ZE DTA143ZKA DTA143ZSA DTA143ZUA A5800431 |
Digital Transistor(Built in Resistor)
From old datasheet system
Digital transistors (built-in resistors)
|
Rohm CO.,LTD.
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| TG2211FT |
RF SPDT Switch
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
| TG2216TU |
RF SPDT Switch
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
Toshiba Corporation
|
| TG2206F |
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
|
| NGA-589 |
MICROWAVE/MILLIMETERWAVEAMPLIFIER|GAAS|TO-243|3PIN|PLASTIC
DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
|
Electronic Theatre Controls, Inc.
Sirenza Microdevices, Inc.
|
| Q62703-Q67 LD261 LD261-5 Q62703-Q395 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| OH004 OH10004OH004 |
GaAs device - GaAs Hall Devices
|
Matsshita / Panasonic
|
| DTC143Z-AE3-R DTC143Z-AL3-R DTC143Z-AN3-R DTC144E- |
NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS) npn型数字晶体管（内置电阻，
NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS) 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
|
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UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
